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| SI2328DS New Product Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.250 @ VGS = 10 V ID (A) 1.5 TO-236 (SOT-23) G 1 3 D S 2 Top View SI2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C L = 0.1 mH TA= 25_C TA= 70_C Symbol VDS VGS 5 sec 100 "20 1.5 Steady State Unit V 1.15 0.92 6 6 1.8 0.6 mJ A 0.73 0.47 -55 to 150 W _C A ID IDM IAS EAS IS 1.2 1.25 PD TJ, Tstg 0.80 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71796 S-05372--Rev. A, 25-Dec-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 80 130 45 Maximum 100 170 55 Unit _C/W C/W 1 SI2328DS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 70_C VDS w 15 V, VGS = 10 V VGS = 10 V, ID = 1.5 A VDS = 15 V, ID = 1.5 A IS = 1.0 A, VGS = 0 V 6 0.195 4 0.8 1.2 0.250 100 2 "100 1 75 mA m A W S V V nA Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 50 V, VGS = 10 V, ID = 1.5 A 3.3 0.47 1.45 4.0 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time td(on) tr td(off) tf trr IF = 1.5 A, di/dt = 100 A/ms VDD = 50 V, RL = 33 W ID ^ 0.2 A, VGEN = 10 V, RG = 6 W 7 11 9 10 50 11 17 15 15 100 ns ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 12 VGS = 10, 9, 8 V 9 I D - Drain Current (A) 6V 6 I D - Drain Current (A) 7V 12 Transfer Characteristics 9 6 3 3, 2, 1 V 5V TC = 125_C 3 25_C 4V 0 0 2 4 6 8 10 0 0 2 4 -55_C 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71796 S-05372--Rev. A, 25-Dec-01 2 SI2328DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.6 r DS(on) - On-Resistance ( W ) 250 Vishay Siliconix Capacitance 0.5 C - Capacitance (pF) 200 Ciss 150 0.4 VGS = 10 V 0.3 100 0.2 0.1 50 Crss 0 20 40 Coss 0.0 0 3 6 ID - Drain Current (A) 9 12 0 60 80 100 VDS - Drain-to-Source Voltage (V) Gate Charge 20 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 1.5 A 16 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.5 A 2.0 12 r DS(on) - On-Resistance ( W) (Normalized) 2 3 4 5 6 1.5 8 1.0 4 0.5 0 0 1 Qg - Total Gate Charge (nC) 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.6 On-Resistance vs. Gate-to-Source Voltage 1 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.5 ID = 1.5 A I S - Source Current (A) 0.4 0.3 0.1 TJ = 25_C 0.2 0.1 0.01 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71796 S-05372--Rev. A, 25-Dec-01 www.vishay.com 3 SI2328DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 12 10 ID = 250 mA Power (W) 0.0 8 TA = 25_C 6 Single Pulse Power 0.3 V GS(th) Variance (V) -0.3 -0.6 4 -0.9 2 -1.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 176_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71796 S-05372--Rev. A, 25-Dec-01 |
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